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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649 DESCRIPTION *High Collector Current-IC=-1.5A *High Collector-Emitter Breakdown Voltage: V(BR)CEO=-120V(Min) *Good Linearity of hFE *Low Saturation Voltage *Complement to Type 2SD669 APPLICATIONS *Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Tstg Junction Temperature Storage Temperature Range 1 150 -55~150 VALUE -180 -120 -5 -1.5 -3 20 W UNIT V V V A A isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO hFE-1 hFE-2 fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= -1mA ; IE= 0 IC= -10mA ; RBE= IE= -1mA ; IC=0 IC= -500mA; IB= -50mA IC= -150mA ; VCE= -5V VCB= -160V; IE= 0 IC= -150mA ; VCE= -5V IC=-500mA ; VCE= -5V IC= -150mA ; VCE= -5V IE= 0; VCB= -10V,ftest= 1MHz 60 30 140 27 MIN -180 -120 -5 TYP. 2SB649 MAX UNIT V V V -1.0 -1.5 -10 320 V V A MHz pF hFE-1 Classifications B 60-120 C 100-200 D 160-320 isc Websitewww.iscsemi.cn 2 |
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